LLNL selected to lead next-gen extreme ultraviolet lithography research

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From left: Drew Willard, Brendan Reagan and Issa Tamer work on the Big Aperture Thulium (BAT) laser system. (Photo: Jason Laurea/LLNL)

Decades of cutting-edge laser, optics and plasma physics research at Lawrence Livermore National Laboratory (LLNL) played a key role in the underlying science that the semiconductor industry uses to manufacture advanced microprocessors. Now a new research partnership led by LLNL aims to lay the groundwork for the next evolution of extreme ultraviolet (EUV) lithography, centered around a Lab-developed driver system dubbed the Big Aperture Thulium (BAT) laser.

LLNL plasma physicists, Brendan Reagan and Jackson Williams, are the project’s co-lead principal investigators. The project includes scientists from SLAC National Accelerator Laboratory; ASML San Diego; and the Advanced Research Center for Nanolithography (ARCNL), a public-private research center based in the Netherlands.