The approach is to use appropriately doped semi-insulating gallium nitride to provide a high damage tolerant photoconductor with high responsivity to various pump wavelength light.  Mn, C, or Fe are used as dopants to provide a source of electrons or holes that can be excited.  This is combined with the use of dichroic antireflection coating at the GaN/polyimide/liquid crystal…

LLNL’s approach is to use their patented Photoconductive Charge Trapping Apparatus (U.S. Patent No. 11,366,401) as the active switch needed to discharge voltage across a vacuum gap in a particle accelerator, like the one described in their other patent (U.S. Patent No.