This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion…

This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize.

Laser diode lensing effect can be substantially reduced by creating a pattern interface such that the substrate is only attached at the diode mesa. This is achieved by either creating a pattern solder joint and/or pattern substrate.