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A Drift Step Recovery Diode (DSRD) is a fast opening, high-voltage pin diode that is stacked in series and used in pulsed power systems to deliver nanosecond-scale high-voltage pulses into a load.  These are typically produced by an expensive method that involves deep diffusion of n- and p-type dopants into a low to moderately doped wafer or by the more expensive epitaxial growth of the desired structure.  What is needed is a less expensive method of fabricating DRSDs.


Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

  • Epitaxially grown repeating layers -> less manufacturing costs
  • High voltage switches
  • Used for high power microwave sources
Potential Applications
  • High Power Switch
  • Pulsed Power
  • Drift Step Recovery Diode
Development Status

Current stage of technology development:  TRL 2

LLNL has filed for patent protection on this invention.

U.S. Patent No. 11,322,626 Tunnel Drift Step Recovery Diode, issued 05/03/22

Reference Number