A Drift Step Recovery Diode (DSRD) is a fast opening, high-voltage pin diode that is stacked in series and used in pulsed power systems to deliver nanosecond-scale high-voltage pulses into a load. These are typically produced by an expensive method that involves deep diffusion of n- and p-type dopants into a low to moderately doped wafer or by the more expensive epitaxial growth of the desired structure. What is needed is a less expensive method of fabricating DRSDs.
Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD. A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower.
- Epitaxially grown repeating layers -> less manufacturing costs
- High voltage switches
- Used for high power microwave sources
- High Power Switch
- Pulsed Power
- Drift Step Recovery Diode
Current stage of technology development: TRL 2
LLNL has filed for patent protection on this invention.
U.S. Patent No. 11,322,626 Tunnel Drift Step Recovery Diode issued 05/03/22
U.S. Patent Application No. 2023/0121080 Monolithic Growth of Epitaxial Silicon Devices Via Co-Doping published April 20, 2023