LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments. These designs include:
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![Segments of transmission line lengths can be switched to open circuit (as shown) or shorted to the ground (not shown)](/sites/default/files/styles/scale_exact_400x400_/public/2023-05/Segments%20of%20tranmission%20line%20lengths.png?itok=FF0qaBGw)
Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength. The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons. The device architecture allows maximum light entering the aperture. The top and bottom electrodes are made of ultra wide band gap (UWBG)…
![Annular illumination on photo conductor by Conical Total Internal Reflection “CTIR” endcap](/sites/default/files/styles/scale_exact_400x400_/public/2023-05/CONIFR.png?itok=L4wSanXF)
The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS. Light from the fiber enters the frustrum, spreads out, and enters the PCSS. Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber. The shape of the novel frustrum is…
![multichannel_pyrometer.jpg multichannel_pyrometer](/sites/default/files/styles/scale_exact_400x400_/public/2019-08/multichannel_pyrometer.jpg?itok=x0sCe_BN)
LLNL researchers have designed and tested performance characteristics for a multichannel pyrometer that works in the NIR from 1200 to 2000 nm. A single datapoint without averaging can be acquired in 14 microseconds (sampling rate of 70,000/s). In conjunction with a diamond anvil cell, the system still works down to about 830K.
![OTV Image](/sites/default/files/styles/scale_exact_400x400_/public/2022-02/OTV%20Image.png?itok=KEAmHqpM)
The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…