Skip to main content
Image
Picture of interlocked electrode structure with metal plated surfaces

LLNL researchers have developed a fabrication process for creating 3D random interdigitated architectures of anodes and cathodes, eliminating the need for a membrane to separate them.  This approach is similar to the repeating interdigitated multi-electrode architectures that also were developed at LLNL. 

Image
OALV design with High-k Photoconductor and High-k Optical Window

LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments.  These designs include:

Image
Electrodeposition of Zn onto 3D printed copper nanowire (CuNW)

Improving the active material of the Zn anode is critical to improving the practicality of Zn-MnO2 battery technology. LLNL researchers have developed a new category of 3D structured Zn anode using a direct-ink writing (DIW) printing process to create innovative hierarchical architectures.  The DIW ink, which is a gel-based mixture composed of zinc metal powder and organic binders, is extruded…

Image
Segments of transmission line lengths can be switched to open circuit (as shown) or shorted to the ground (not shown)

Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength.  The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons.  The device architecture allows maximum light entering the aperture.  The top and bottom electrodes are made of ultra wide band gap (UWBG)…

Image
Annular illumination on photo conductor by Conical Total Internal Reflection “CTIR” endcap

The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS.  Light from the fiber enters the frustrum, spreads out, and enters the PCSS.  Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber.  The shape of the novel frustrum is…

Image
OTV Image

The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…