LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments. These designs include:
Keywords
- Show all (109)
- Additive Manufacturing (43)
- Imaging Systems (9)
- Photoconductive Semiconductor Switches (PCSS) (9)
- 3D Printing (7)
- Semiconductors (6)
- Electric Grid (3)
- Manufacturing Improvements (3)
- Power Electronics (3)
- Sensors (3)
- Synthesis and Processing (3)
- Computing (2)
- Manufacturing Automation (2)
- MEMS Sensors (2)
- Optical Sensors (2)
- Particle Accelerators (2)
- Precision Engineering (2)
- Spectrometers (2)
- Manufacturing Simulation (1)
- (-) Optical Switches (4)
- (-) Volumetric Additive Manufacturing (1)
Technology Portfolios
Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength. The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons. The device architecture allows maximum light entering the aperture. The top and bottom electrodes are made of ultra wide band…
The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS. Light from the fiber enters the frustrum, spreads out, and enters the PCSS. Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber. The shape of the novel…
LLNL has developed a system and method that accomplishes volumetric fabrication by applying computed tomography (CT) techniques in reverse, fabricating structures by exposing a photopolymer resin volume from multiple angles, updating the light field at each angle. The necessary light fields are spatially and/or temporally multiplexed, such that their summed energy dose in a target resin volume…
The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…