This invention solves a limitation in the current practice of adding hydroxyl functional groups to the aminopolymer through the use of an alternative synthetic approach. The novelty of our approach is to produce new structurally modified relatives of common aminopolymers (PEI and PPI) as well as new functionalized materials in which the hydroxyl groups are tethered to a carbon in the backbone…
Image
LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments. These designs include:
Image
Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength. The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons. The device architecture allows maximum light entering the aperture. The top and bottom electrodes are made of ultra wide band gap (UWBG)…
Image
The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS. Light from the fiber enters the frustrum, spreads out, and enters the PCSS. Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber. The shape of the novel frustrum is…
Image
This invention describes a multiple nozzle microfluidic unit that allows simultaneous generation streams of multiple layered coaxial liquid jets. Liquids are pumped into the device at a combined flow rate from 100 mL/hr to 10 L/hr. Droplets are created with diameters in the range of 1 µm to 5 mm and can be created with 1-2 shell layers encapsulating fluid. Droplets created from the system can…
Image
The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…