LLNL has developed a method that adds a polyamine based crosslinker and an acid receptor, based on MgO nanoparticles into a polymer bonded PBX, where the polymer binder is a fluoropolymer containing vinylidene difluoride functionality.  Crosslinking kinetics can then be controlled by selecting an appropriate amine structure, pressing temperature and optionally the addition of a chemical…

LLNL researchers uses Additive Manufacturing (AM) to create reinforcing scaffolds that can be integrated with High Explosives (HE) or solid rocket fuel with minimal volume fraction. Its main benefit is to create stability in harsh field conditions.  Its secondary benefit is providing another method to finely tune blast performance or fuel burn. Creating complex shapes with structural…

This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion…

This invention proposes to engineer the temperature dependence of the emission wavelength of LEDs and laser diodes. The approach is to use a strain-inducing coating to counteract the intrinsic temperature coefficient of the emission wavelength of the LED or laser diode device thereby rendering it athermal. This invention avoids additional complexity, size, weight and power dissipation of…

This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize.

Laser diode lensing effect can be substantially reduced by creating a pattern interface such that the substrate is only attached at the diode mesa. This is achieved by either creating a pattern solder joint and/or pattern substrate.