LLNL researchers have developed an innovative and uniform single-pot polymer multi-material system, based on a combination of 3 different reactive chemistries. By combining the three different constituent monomers, fine control of mechanical attributes, such as elastic modulus, can be achieved by adjusting the dosage of UV light throughout the additive manufacturing process. This results in…
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LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments. These designs include:
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To overcome challenges that existing techniques for creating 3DGs face, LLNL researchers have developed a method that uses a light-based 3D printing process to rapidly create 3DG lattices of essentially any desired structure with graphene strut microstructure having pore sizes on the order of 10 nm. This flexible technique enables printing 3D micro-architected graphene objects with complex,…
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Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength. The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons. The device architecture allows maximum light entering the aperture. The top and bottom electrodes are made of ultra wide band gap (UWBG)…
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The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS. Light from the fiber enters the frustrum, spreads out, and enters the PCSS. Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber. The shape of the novel frustrum is…
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The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…