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4H-SiC tips fabricated by etching 2 μm wide pillars at 1550 °C for 1 h. The inset shows that the tips are as narrow as 15 nm in diameter

LLNL researchers have developed an approach to form silicon carbide (and diamond) nanoneedles using plasma etching that create micro pillars followed by chemical etching of the pillars in forming gas containing hydrogen and nitrogen. Combining these two etching processes allow for fabrication of micro- and nanoneedles that are thinner and sharper than conventionally fabricated needles.

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GaNC OALV

The approach is to use appropriately doped semi-insulating gallium nitride to provide a high damage tolerant photoconductor with high responsivity to various pump wavelength light.  Mn, C, or Fe are used as dopants to provide a source of electrons or holes that can be excited.  This is combined with the use of dichroic antireflection coating at the GaN/polyimide/liquid crystal…