The approach is to use appropriately doped semi-insulating gallium nitride to provide a high damage tolerant photoconductor with high responsivity to various pump wavelength light. Mn, C, or Fe are used as dopants to provide a source of electrons or holes that can be excited. This is combined with the use of dichroic antireflection coating at the GaN/polyimide/liquid crystal…
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LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths. These devices operate by supplying a high voltage (>10 kV) to one side of the switch. A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive. Ultrawide bandgap (UWBG) semiconductors are used to achieve sub-…
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LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities. In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source. The initial exposure to light can set up the desired conduction current, after which the light source could be turned…