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GaNC OALV

The approach is to use appropriately doped semi-insulating gallium nitride to provide a high damage tolerant photoconductor with high responsivity to various pump wavelength light.  Mn, C, or Fe are used as dopants to provide a source of electrons or holes that can be excited.  This is combined with the use of dichroic antireflection coating at the GaN/polyimide/liquid crystal…

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual…

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multichannel_pyrometer

LLNL researchers have designed and tested performance characteristics for a multichannel pyrometer that works in the NIR from 1200 to 2000 nm. A single datapoint without averaging can be acquired in 14 microseconds (sampling rate of 70,000/s). In conjunction with a diamond anvil cell, the system still works down to about 830K.