This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion…

This invention proposes to engineer the temperature dependence of the emission wavelength of LEDs and laser diodes. The approach is to use a strain-inducing coating to counteract the intrinsic temperature coefficient of the emission wavelength of the LED or laser diode device thereby rendering it athermal. This invention avoids additional complexity, size, weight and power dissipation of…

This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize.

Laser diode lensing effect can be substantially reduced by creating a pattern interface such that the substrate is only attached at the diode mesa. This is achieved by either creating a pattern solder joint and/or pattern substrate.

The technology that is available has the capability to inject realistic radiation detection spectra into the amplifier of a radiation detector and produce the all the observables that are available with that radiation detection instrument; count-rate, spectrum, dose rate, etc.

The system uses the capability of LLNL to generate the source output for virtually any source and determine…