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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual silicon…

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Spectroscopic Injection Pulser prototype

The technology that is available has the capability to inject realistic radiation detection spectra into the amplifier of a radiation detector and produce the all the observables that are available with that radiation detection instrument; count-rate, spectrum, dose rate, etc.

The system uses the capability of LLNL to generate the source output for virtually any source and determine…