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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual…

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geothermal steam exhaust

LLNL has a patented process to produce colloidal silica directly from geothermal fluids. Livermore’s process uses membranes to produce a mono-dispense slurry of colloidal silica particles for which there are several applications. LLNL has demonstrated that colloidal silica solutions that result from extraction of silica from geothermal fluids undergo a transition to a solid gel over a range of…