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Electrochemical CO2 conversion to valuable fuels and chemicals

LLNL’s researchers use physical vapor deposition (sputter deposition or electron beam deposition) to coat an inert gasket material (i.e. PTFE) with a conductive metal (i.e. copper). The gas diffusion electrode overlaps onto the copper coated gasket to allow for electrical conductivity between the catalyst surface and the flow field/current collector of a CO2 electrolyzer. The coated gasket…

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SEM image of nanoporous Cu catalyst material

Using their computational design optimization, LLNL researchers have developed copper-based dilute alloy catalysts (contains <10 at.% of the minority metal alloy component) and demonstrated these novel catalysts have improved energy efficiency and selectivity of the methane conversion reaction.  By alloying copper with a small amount of the electropositive minority metal element, the…

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OALV design with High-k Photoconductor and High-k Optical Window

LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments.  These designs include:

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Graphite

LLNL’s innovation offers an alternate synthetic route to graphite at lower cost using a molten salt mixture of CaCl2-CaCO3-CaO.  The synthetic production of graphite and other high-value carbon materials is accomplished in molten salt media via electrochemical reduction and transformation of the carbon from the carbonate ion. The broad electrochemical window of molten salts enables the…

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Segments of transmission line lengths can be switched to open circuit (as shown) or shorted to the ground (not shown)

Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength.  The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons.  The device architecture allows maximum light entering the aperture.  The top and bottom electrodes are made of ultra wide band gap (UWBG)…

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Annular illumination on photo conductor by Conical Total Internal Reflection “CTIR” endcap

The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS.  Light from the fiber enters the frustrum, spreads out, and enters the PCSS.  Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber.  The shape of the novel frustrum is…

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Projection Microstereolithographic Additively Manufactured Anion Exchange Membrane

The novel LLNL approach is to use projection microstereolithography (LAPµSL), starting with a photocurable methacrylate resin formulation consisting of a combination of a photoinitiator, photoabsorber, inhibitor, solvents, and other additives.  Prior to use, the resin is pretreated to control viscosity for easier handling.  The resin is fed to a LAPµSL printer which employs a near UV light…

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SEM image showing internal porosity of DIW printed parts

The inventors have developed a 3% Yttria partially-stabilized Zirconia (3YZ) ceramic ink that produces parts with both nano and microporosity and is compatible with two AM techniques: DIW and projection microstereolithography (PμSL). The 3YZ nano-porous ceramic printed parts had engineered macro cavities measuring several millimeters in length, wall thicknesses ranging from 200 to 540 μm, and…

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Microcapsules offer high surface area and a superior delivery system.

This invention describes a multiple nozzle microfluidic unit that allows simultaneous generation streams of multiple layered coaxial liquid jets. Liquids are pumped into the device at a combined flow rate from 100 mL/hr to 10 L/hr. Droplets are created with diameters in the range of 1 µm to 5 mm and can be created with 1-2 shell layers encapsulating fluid. Droplets created from the system can…

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OTV Image

The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…