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The addition of initiator affects the crossover point of the storage modulus (solid line) and the loss modulus (dashed lined), which indicates curing. As initiator content increases, the reaction proceeds more quickly.

The approach is to use peroxides to modify the reaction kinetics in the production of polysiloxanes.  A radical initiator in the presence of a hydride-terminated polysiloxane will increase the rate of curing and reduce manufacturing costs.  At a minimum a formulation would contain a hydride-terminated polysiloxane, a platinum catalyst, and an initiator that generates radicals. …

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual…