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Stock image UAV drone monitoring gas near pipeline valves

LLNL researchers have developed a TDLAS-based, standalone, real-time gas analyzer in a small form-factor for continuous or single-point monitoring.  The system can analyze multiple gases with ultra-high sensitivity (ppm detection levels) in harsh conditions when utilizing wavelength-modulation spectroscopy (WMS). 

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual silicon…

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Schematic of 2P3C setup.  Pump laser component is in red while probe laser component is denoted in blue.

LLNL’s novel approach combines 2-color spectroscopy with CRDS, a combination not previously utilized.