LLNL developed a novel SOS diode structure starting with a n-type silicon wafer.  On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure.  Crucially, an extra n-region is introduced to the structure to address pre-pulses.  The result is a SOS diode with an optimized p+/p/n-…

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…