This LLNL invention is a wide bandgap (WBG) or ultra-wide bandgap (UWBG) material comprising a PCSS that is modified, either chemically through alloying and/or mechanically through strain fields, in order to tune the energetic positions of the valence and/or conduction bands and the associated optical transition energies that create and quench the PCSS responsivity.

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

LLNL researchers faced this challenge by bridging the gap between VEDs and solid-state electronics (SSE).  Their approach was to create a hybrid vacuum microelectronic device (VMD) architecture that combines the properties of vacuum as the electronic medium and the compact form factor and manufacturing scalability of semiconductor microelectronic chips.