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Picture of SLA printed structures using 3D printable nitrile-containing photopolymer resins

LLNL’s invention is a photopolymerizable polymer resin that consists of one or more nitrile-functional based polymers. The resin is formulated for SLA based 3D printing allowing for the production of nitrile-containing polymer components that can then be thermally processed into a conductive, highly graphitic materials. The novelty of the invention lies in (1) the photo-curable nitrile-…

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Printed TPMS membrane structures using nanoporous photoresist

LLNL researchers have developed novel advanced manufactured biomimetic 3D-TPMS (triply periodic minimal surface) membrane architectures such as a 3D gyroid membrane. The membrane is printed using LLNL's nano-porous photoresist technology.  LLNL’s 3D-TPMS membranes consist of two independent but interpenetrating macropore flow channel systems that are separated by a thin nano-porous wall.  3D-…

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LLNL energy grid protection device

The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation.  Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.

So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…

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JFET Device Structure

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

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Tunneling Diode between two DSRDs

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower.