This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion…

This invention proposes to engineer the temperature dependence of the emission wavelength of LEDs and laser diodes. The approach is to use a strain-inducing coating to counteract the intrinsic temperature coefficient of the emission wavelength of the LED or laser diode device thereby rendering it athermal. This invention avoids additional complexity, size, weight and power dissipation of…

This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize.

Laser diode lensing effect can be substantially reduced by creating a pattern interface such that the substrate is only attached at the diode mesa. This is achieved by either creating a pattern solder joint and/or pattern substrate.

The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation.  Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.

So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

Recent advancements in additive manufacturing, also called 3D printing, allow precise placement of materials in three dimensions. LLNL researchers have invented mechanical logic gates based on flexures that can be integrated into the microstructure of a micro-architected material through 3D printing. The logic gates can be combined into circuits allowing complex logic operations to be…

The LLNL method for optimizing as built optical designs uses insights from perturbed optical system theory and reformulates perturbation of optical performance in terms of double Zernikes, which can be calculated analytically rather than by tracing thousands of rays. A new theory of compensation is enabled by the use of double Zernikes which allows the performance degradation of a perturbed…