This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion…

This invention proposes to engineer the temperature dependence of the emission wavelength of LEDs and laser diodes. The approach is to use a strain-inducing coating to counteract the intrinsic temperature coefficient of the emission wavelength of the LED or laser diode device thereby rendering it athermal. This invention avoids additional complexity, size, weight and power dissipation of…

This invention proposes a method to overcome the key limitation of electrically pumped lasers based on AlN, AlGaN, or AlInGaN, namely the lack of suitable shallow donor and acceptor dopants. As the band gap of these materials increases (and the emission wavelength decreases), both electrons and holes require greater thermal energies in order to ionize.

Laser diode lensing effect can be substantially reduced by creating a pattern interface such that the substrate is only attached at the diode mesa. This is achieved by either creating a pattern solder joint and/or pattern substrate.

The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation.  Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.

So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

The suppressor has a series of chambers for the propellant to flow through, but unlike all traditional suppressors, the chambers are open, not closed. The propellant is not trapped. It keeps moving. We manage its unimpeded flow through the suppressor. This is the key underlying technology of our suppressor design that enables all the improvements over the 100-year old traditional designs.

Livermore Lab researchers have developed a tunable shaped charge which comprises a cylindrical liner commonly a metal such as copper or molybdenum but almost any solid material can be used and a surround layer of explosive in which the detonation front is constrained to propagate at an angle with respect to the charge axis.  The key to the concept is the ability to deposit a surrounding…

Livermore Lab researchers have developed a method that combines additive manufacturing (AM) with an infill step to render a final component which is energetic. In this case, AM is first used to print a part of the system, and this material can either be inert or energetic on its own. A second material is subsequently added to the structure via a second technique such as casting, melt…