This invention proposes achieving the same effect of a single, high intensity pulse through the use of a closely spaced burst of short duration pulses. By keeping the intensity of the individual pulses below the damage threshold the risk of catastrophic damage is greatly mitigated. Additionally, the pulses are directed to strike the target at locations temporally and spatially sufficiently…

This invention proposes the use of a nonlinear spectral broadening subsystem as a post-CPA pulse compression add-on for high energy laser systems. The proposed solution utilizes the beam profile of a high peak power laser as a reference to shape a highly transmissive nonlinear plastic (e.g., CR39) itself to ensure a spatially homogeneous nonlinear spectral broadening.

The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation.  Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.

So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned…

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower.