LLNL researchers has developed designs to augment WBG/UWBG-based OALVs to improve their power handling capability under CW operational environments. These designs include:
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- Photoconductive Semiconductor Switches (PCSS) (9)
- Imaging Systems (8)
- Semiconductors (6)
- Compact Space Telescopes (5)
- Laser Materials Processing (5)
- Diode Lasers (4)
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- Optical Damage Mitigation (3)
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- (-) Optical Switches (4)
- (-) Power Electronics (3)
- (-) Precision Optical Finishing (3)
This invention takes advantage of the high water-solubility of key NIF KDP crystal optics and uses water as an etchant to remove surface defects and improve the laser induced damage threshold. Since pure water etches KDP too fast, this invention is to disperse water as nanosized droplets in a water-in-oil micro-emulsion. While in a stable micro-emulsion form, the surfactant additives prevent…
This invention proposes to use laser induced melting/softening to locally reshape the form of a glass optic. The local glass densification that results induces predictable stresses that through plate deformation mechanics yield a deterministic methodology for arbitrarily reshaping an optic surface figure and wavefront without the need to remove material.
The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation. Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.
So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…
LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities. In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source. The initial exposure to light can set up the desired conduction current, after which the light source could be turned off. Even with…
Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD. A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower.
Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength. The diamond material is specifically doped with substitutional nitrogen, which act as a source of electrons. The device architecture allows maximum light entering the aperture. The top and bottom electrodes are made of ultra wide band gap (UWBG)…
The approach is to use a custom-designed frustrum and attach it to the optical fiber that connects to the PCSS. Light from the fiber enters the frustrum, spreads out, and enters the PCSS. Any unabsorbed light re-enters the frustrum and, because of its geometry, reflects back into the PCSS itself with only a negligible fraction escaping from the fiber. The shape of the novel frustrum is…
The Optical Transconductance Varistor (OTV, formerly Opticondistor) overcomes depletion region voltage limitations by optically exciting wide bandgap materials in a compact package. A 100μm thick crystal could have the capability approaching 40kV and would replace numerous equivalent junction devices. Thus, unlike present junction transistors or diodes, this wide bandgap device can be stacked…
LLNL's Slurry Stabilization Method provides a chemical means of stabilizing a polishing compound in suspension at working concentrations without reducing the rate of material removal. The treated product remains stable for many months in storage.