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structures created using method for producing laser gain media by atomic layer deposition

Powder atomic layer deposition process is used to coat nanopowders of host materials (e.g. yttrium aluminum garnet) with optically active neodymium organometal precursor followed by O2/O3 RF plasma to convert to a single layer of Nd2O3. The process can be repeated to build arbitrarily thick layers with custom doping profiles and followed by post-…

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Laser peening induces deep compressive stress, which significantly extends the service lifetime over any conventional treatment

This invention proposes using a pulse laser configured to generate laser pulses and a controller for controlling operation of the pulse laser. The controller is further configured to control the pulse laser to cause the pulse laser to generate at least one of the laser pulses with a spatiotemporally varying laser fluence over a duration of at least one of the laser pulses. The spatiotemporally…

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large potassium dihydrogen phosphate KDP crystal

This invention takes advantage of the high water-solubility of key NIF KDP crystal optics and uses water as an etchant to remove surface defects and improve the laser induced damage threshold. Since pure water etches KDP too fast, this invention is to disperse water as nanosized droplets in a water-in-oil micro-emulsion. While in a stable micro-emulsion form, the surfactant additives prevent…

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LLNL’s CO2 laser-based Optics Mitigation Facility adapted for controlled laser melting of glass optics.

This invention proposes to use laser induced melting/softening to locally reshape the form of a glass optic. The local glass densification that results induces predictable stresses that through plate deformation mechanics yield a deterministic methodology for arbitrarily reshaping an optic surface figure and wavefront without the need to remove material.

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Custom PCB design of a PCSS Laser Diode Driver

LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths.  These devices operate by supplying a high voltage (>10 kV) to one side of the switch.  A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive.

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JFET Device Structure

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

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Tunneling Diode between two DSRDs

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

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thermoelectric cooler (TEC) embedded substrate for cooling of high power devices

For cooling a high power device, the novel approach is to use a thermoelectric cooler (TEC)-based embedded substrate with proper selection of the TEC material as an active cooler.  The packaging configuration of TEC allows cooling the entire die without the use of a fluid.  The process is compatible with the thin film TEC material.  Standard semiconductor processes can be used to manufacture…

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual silicon…

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Unique LLNL capabilities enable GaN superjunctions

The approach is to use Charge Balance Layers (CBLs) to create a superjunction device in wide bandgap materials.  These CBLs enable the device to effectively spread the electric field over 2- or 3-dimensions within a semiconductor voltage sustaining layer instead of 1-dimension, thereby increasing the maximum voltage a device is capable of withstanding.  The challenge of using CBLs is the…

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creation of ultra-high energy density matter by an intense laser pulse
Livermore Lab researchers have developed two new methods for improving the efficiency of laser drilling. The first method is based on multi-pulse laser technology. Two synchronized free-running laser pulses from a tandem-head Nd:YAG laser and a gated CW laser are capable of drilling through 1/8-in-thick stainless-steel targets at a standoff distance of 1 m without gas-assist. The combination of a…
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Hand polishing optics

LLNL's Slurry Stabilization Method provides a chemical means of stabilizing a polishing compound in suspension at working concentrations without reducing the rate of material removal. The treated product remains stable for many months in storage.

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Laser Peening

LLNL’s system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator.

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nuclear reactor

The new LLNL technique works by transiently removing and trapping concrete or rock surface material, so that contaminants are confined in a manner that is easy to isolate and remove. Our studies suggest that 10 m2 of surface could be processed per hour. The technique easily scales to more surface/hr.