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The essence of this invention is a method that couples network architecture using neural implicit representations coupled with a novel parametric motion field to perform limited angle 4D-CT reconstruction of deforming scenes.

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Custom PCB design of a PCSS Laser Diode Driver

LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths.  These devices operate by supplying a high voltage (>10 kV) to one side of the switch.  A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive.

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multi-spectral nondestructive characterization of in-shell tree nuts

LLNL’s novel technology automates the inspection process by using a scanning system that captures data within the walnut shell without having to open the shell. The system output gives a visual image inside the walnut shell sufficient to evaluate and rate the quality of the walnut.  The system uses a camara and radar that can capture data at a rapid rate. This improves speed and reliability…

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solid state streak detector

The approach is to develop a solid-state X-ray imager based on the architecture of the Silicon Drift Detector (SDD) which uses a series of cathode strips on both sides of a silicon wafer to achieve bulk depletion and electron drift.  The invention leverages this SDD functionality to achieve signal stretching of liberated charge carriers from X-Ray photons that converts the time domain into the…

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JFET Device Structure

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

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Tunneling Diode between two DSRDs

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

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Schematic of LLNL’s Fast Image Acquisition System

LLNL’s novel approach is to use a continuous moving camera with a scan speed of >1 mm/sec and a frame rate of 100 frames per second.  The key is to have a light source that flashes with a duration of one nanosecond, thus essentially freezing the image with no blur.  Clear images of high resolution can then be captured through a high-magnification objective lens (reflection mode) or through…

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thermoelectric cooler (TEC) embedded substrate for cooling of high power devices

For cooling a high power device, the novel approach is to use a thermoelectric cooler (TEC)-based embedded substrate with proper selection of the TEC material as an active cooler.  The packaging configuration of TEC allows cooling the entire die without the use of a fluid.  The process is compatible with the thin film TEC material.  Standard semiconductor processes can be used to manufacture…

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3DQ Concept:  Use two 2D detectors to enable detection of 3D position for the same event.

LLNL’s approach to the development of a wide-field, three-dimensional quantum (3DQ) microscope is to harness quantum entangled photons to form simultaneous 3D optical images, which could be a new paradigm for 3D volumetric imaging of biological specimens.  The 3DQ microscope is comprised of a novel optical system with highly sensitive detectors and an on-demand light source of entangled…

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual silicon…

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Unique LLNL capabilities enable GaN superjunctions

The approach is to use Charge Balance Layers (CBLs) to create a superjunction device in wide bandgap materials.  These CBLs enable the device to effectively spread the electric field over 2- or 3-dimensions within a semiconductor voltage sustaining layer instead of 1-dimension, thereby increasing the maximum voltage a device is capable of withstanding.  The challenge of using CBLs is the…

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Livermore Tomography Tools  LTT

To solve these challenges using new and existing CT system designs, LLNL has developed an innovative software package for CT data processing and reconstruction. Livermore Tomography Tools (LTT) is a modern integrated software package that includes all aspects of CT modeling, simulation, reconstruction, and analysis algorithms based on the latest research in the field. LTT contains the most…

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Livermore Tomography Tools  LTT

LLNL's 3D X-ray imager combines two different hardware pieces. The first is an x-ray optic with a depth-of-field that is small compared to the object under investigation. Reflective Wolter type x-ray optics are one such design. These hollow optics have a relatively large collection efficiency and can be designed with a large field of view. The depth of focus, which is the distance over which a…

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Marine helmet

LLNL's high fidelity hydrocode is capable of predicting blast loads and directly coupling those loads to structures to predict a mechanical response. By combining this code and our expertise in modeling blast-structure interaction and damage, along with our access to experimental data and testing facilities, we can contribute to the design of protective equipment that can better mitigate the…