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structures created using method for producing laser gain media by atomic layer deposition

Powder atomic layer deposition process is used to coat nanopowders of host materials (e.g. yttrium aluminum garnet) with optically active neodymium organometal precursor followed by O2/O3 RF plasma to convert to a single layer of Nd2O3. The process can be repeated to build arbitrarily thick layers with custom doping profiles and followed by post-…

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Diffuse discharge circuit breaker with latching switch

A thyristor will stay conducting until the current through the device is zero (“current zero”) or perhaps slightly negative.  LLNL’s approach is to use the opticondistor (“OTV”) to force this current zero in order to force the device into an “off” state.  By combining a light-activated thyristor with an OTV, a noise-immune, high efficiency, high-power switching device can be constructed. The…

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Laser peening induces deep compressive stress, which significantly extends the service lifetime over any conventional treatment

This invention proposes using a pulse laser configured to generate laser pulses and a controller for controlling operation of the pulse laser. The controller is further configured to control the pulse laser to cause the pulse laser to generate at least one of the laser pulses with a spatiotemporally varying laser fluence over a duration of at least one of the laser pulses. The spatiotemporally…

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Custom PCB design of a PCSS Laser Diode Driver

LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths.  These devices operate by supplying a high voltage (>10 kV) to one side of the switch.  A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive.

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LLNL energy grid protection device

The approach is to leverage the fact that a momentary “load” equal to the power transmission line impedance, (Z0), during the transient can suppress its propagation.  Z(0) is typically a fixed impedance of several hundred ohms based on the geometry of most single wire transmission lines.

So, an isolated self-powered opticondistor (OTV) system may provide an ultrafast method of…

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JFET Device Structure

LLNL’s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities.   In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source.  The initial exposure to light can set up the desired conduction current, after which the light source could be turned off.  Even with…

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Tunneling Diode between two DSRDs

Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, “monolithic” stacked DSRD.  A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower. 

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Boss Circuit Breaker

LLNL’s novel approach to enable MVDC power systems to operate safely is to develop a wideband gap bulk optical semiconductor switch (WBG BOSS) circuit breaker.  For higher power, efficiency and temperature operation, vanadium-doped silicon carbide (V-doped SiC) appears to be the most promising basis for WBG BOSS circuit breaker (other dopants like aluminum, boron and nitrogen may further…

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Sub-device integrated with Main device of the flow battery (A) and a cross-section of the sub-device (B)

LLNL researchers has developed an approach to mitigate HER on the ‘plating’ electrode, which uses a sub-device as a rebalancing cell to restore electrolyte properties, including pH, conductivity, and capacity across the main device of the flow battery.  This sub-device, which may need to be powered externally, has three major physical components: (1) a cathode electrode, (2) an anode electrode…

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Electrical grid

LLNL has developed a novel methodology for using commercially available automated sensors and actuators which can be deployed at scale in large appliances and plug-in EVs to provide as needed electric grid stabilization capabilities. The approach comprises of a population of voltage relays with a range of setpoints that would gradually reduce load as voltage falls. More severe voltage…

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Electrodeposition of Zn onto 3D printed copper nanowire (CuNW)

Improving the active material of the Zn anode is critical to improving the practicality of Zn-MnO2 battery technology. LLNL researchers have developed a new category of 3D structured Zn anode using a direct-ink writing (DIW) printing process to create innovative hierarchical architectures.  The DIW ink, which is a gel-based mixture composed of zinc metal powder and organic binders, is extruded…

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Compared with conventional slurry-based film electrode manufacturing methods, dry laser powder bed fusion is promising in generating structured electrodes for high power, low cost lithium ion batteries

To address many of the aforementioned challenges of manufacturing LIBs and SSBs, LLNL researchers have developed a number of inventions that offer proposed solutions for their components:

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thermoelectric cooler (TEC) embedded substrate for cooling of high power devices

For cooling a high power device, the novel approach is to use a thermoelectric cooler (TEC)-based embedded substrate with proper selection of the TEC material as an active cooler.  The packaging configuration of TEC allows cooling the entire die without the use of a fluid.  The process is compatible with the thin film TEC material.  Standard semiconductor processes can be used to manufacture…

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SEM image of a prototype for a neural implant shuttle etched into a non-SOI wafer. The 7:1 (Si:Photoresist) etch selectivity used here allowed for a maximum structure height of 32 μm, with up to 75 steps of 0.4 μm height each. Scale bar 100 μm.

For this method, a Silicon on Insulator (SOI) wafer is used to tailor etch rates and thickness in initial steps of the process.  The simple three step process approach is comprised of grayscale lithography, deep reactive-ion etch (DRIE) and liftoff of the SOI wafer.  The liftoff process is used to dissolve the insulating layer, thus separating sections of the wafer as individual silicon…

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Unique LLNL capabilities enable GaN superjunctions

The approach is to use Charge Balance Layers (CBLs) to create a superjunction device in wide bandgap materials.  These CBLs enable the device to effectively spread the electric field over 2- or 3-dimensions within a semiconductor voltage sustaining layer instead of 1-dimension, thereby increasing the maximum voltage a device is capable of withstanding.  The challenge of using CBLs is the…

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creation of ultra-high energy density matter by an intense laser pulse
Livermore Lab researchers have developed two new methods for improving the efficiency of laser drilling. The first method is based on multi-pulse laser technology. Two synchronized free-running laser pulses from a tandem-head Nd:YAG laser and a gated CW laser are capable of drilling through 1/8-in-thick stainless-steel targets at a standoff distance of 1 m without gas-assist. The combination of a…
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Electromechanical battery

The design calculations that have been performed in exploring the potentialities of LLNL's new approaches to flywheel energy storage have been built on existing and past LLNL flywheel programs, including a program aimed at flywheel systems for the bulk storage of electricity at utility scale. To achieve the requirements of such systems, as mentioned above, LLNL has developed some key new…

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Laser Peening

LLNL’s system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator.

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nuclear reactor

The new LLNL technique works by transiently removing and trapping concrete or rock surface material, so that contaminants are confined in a manner that is easy to isolate and remove. Our studies suggest that 10 m2 of surface could be processed per hour. The technique easily scales to more surface/hr.